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Author: Cristiano Calligaro Publisher: CRC Press ISBN: 1000793060 Category : Technology & Engineering Languages : en Pages : 417
Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE) Radiation Hardening by Design (RHBD) Techniques Rad-hard SRAMs Rad-hard PROMs Rad-hard Flash NVMs Rad-hard ReRAMs Rad-hard emerging technologies
Author: Cristiano Calligaro Publisher: CRC Press ISBN: 1000793060 Category : Technology & Engineering Languages : en Pages : 417
Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE) Radiation Hardening by Design (RHBD) Techniques Rad-hard SRAMs Rad-hard PROMs Rad-hard Flash NVMs Rad-hard ReRAMs Rad-hard emerging technologies
Author: Calligaro, Cristiano Publisher: River Publishers ISBN: 8770220204 Category : Technology & Engineering Languages : en Pages : 418
Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes. In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects). After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies
Author: Umberto Gatti Publisher: ISBN: 9788770224192 Category : Languages : en Pages :
Book Description
The book is intended for researchers and professionals interested in understanding how to design and make a preliminary characterization of Radiation Hardened (rad-hard) analog and mixed-signal circuits, exploiting standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes. It starts with an introductory overview of the effects of radiation in space and harsh environments with a specific focus on analog circuits to enable the reader to understand why specific design solutions are adopted to mitigate hard/soft errors. The following four Chapters are devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components applied to Operational Amplifiers, Voltage References, Analog-to-Digital (ADC) and Digital-to-Analog (DAC) converters. Each Chapter is organized with a first part which recalls the basic working principles of such circuit and a second part which describes the main RHBD techniques proposed in the literature to make them resilient to radiation. The approach follows a top-down scheme starting from RHBD at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and finishing at layout level (how to shape a layout to mitigate radiation effects). The last-but-one Chapter is devoted to a special class of analog circuit, the dosimeters, which are gaining importance in space, health and nuclear applications. By leveraging the characteristic of a Flash-memory cell, a re-usable dosimeter is described which includes the sensitive element itself, the analog interface and the process of characterization. The last part is an overview of the strategies adopted for the testing of analog and mixed-signal circuits. In particular, it will focus also on the measurement campaigns performed by the Authors aiming for the characterization of developed rad-hard components under total dose (TID) and single-events (SEE). Technical topics discussed in the book include: - Radiation effects on semiconductor components (TID, SEE) - Radiation Hardening by Design (RHBD) Techniques - Rad-hard Operational Amplifiers - Rad-hard Voltage References - Rad-hard ADC - Rad-hard DAC - Rad-hard Special Circuits - Testing Strategies
Author: William R. Dawes Publisher: William Andrew ISBN: Category : Science Languages : en Pages : 352
Book Description
This book describes hardening of semiconductor components against radiation and temperature. Basic mechanisms of radiation effects on electronic materials and devices are discussed first, followed by such practical topics as hardening technologies, circuit design for hardening, and, finally, hardness assurance. Discussions center mainly on silicon technology.
Author: Santosh K. Kurinec Publisher: CRC Press ISBN: 1351832085 Category : Technology & Engineering Languages : en Pages : 450
Book Description
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Author: Ashok K. Sharma Publisher: Wiley-IEEE Press ISBN: 9780780310001 Category : Technology & Engineering Languages : en Pages : 480
Book Description
Semiconductor Memories provides in-depth coverage in the areas of design for testing, fault tolerance, failure modes and mechanisms, and screening and qualification methods including. * Memory cell structures and fabrication technologies. * Application-specific memories and architectures. * Memory design, fault modeling and test algorithms, limitations, and trade-offs. * Space environment, radiation hardening process and design techniques, and radiation testing. * Memory stacks and multichip modules for gigabyte storage.
Author: Santosh K. Kurinec Publisher: CRC Press ISBN: 1466560614 Category : Technology & Engineering Languages : en Pages : 448
Book Description
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Author: William D. Brown Publisher: Wiley-IEEE Press ISBN: Category : Computers Languages : en Pages : 624
Book Description
This comprehensive reference book provides electronics engineers with the technical data and perspective necessary for the intelligent selection, specification, and application of nonvolatile semiconductor memory devices. A "one-stop shopping" tool for the working engineer, this book presents the fundamental aspects of nonvolatile semiconductor memory technologies, devices, reliability, and applications.
Author: Cristiano Calligaro
Author: Cristiano Calligaro
Author: Calligaro, Cristiano
Author: Umberto Gatti
Author: William R. Dawes
Author: Santosh K. Kurinec
Author: Ashok K. Sharma
Author: 
Author: Santosh K. Kurinec
Author: William D. Brown
Author: Chenming Hu