Author: Roshanak Lehna Publisher: kassel university press GmbH ISBN: 373760388X Category : Languages : en Pages : 190
Book Description
The modern wireless communication systems require modulated signals with wide modulation bandwidth. This, in turns, requires signals with very high dynamic range and peak-to-average power ratio (PAPR). This means that the amplifier in the base-station has to work at a power back-off as large as the dynamic range of the signal, so that the amplifier has a high linearity in this region. For the standard single-stage amplifiers, this large power back-off reduces the efficiency dramatically. In this work, a three-way Doherty power amplifier (DPA) aiming at high power efficiency within a dynamic range of 9.5 dB, is designed and fabricated using partitioning design approach. The partitioning design approach decomposes a complex design task into small-sized, well-controllable, and verifiable subcircuits. This advanced straight forward method has shown very promising results. Using this design approach, a three-way DPA has been designed to demonstrate the advantages of this reliable design technique as well. Based on the design of a single-stage power amplifier and proposing a novel output power combiner, a 6 W three-way DPA has been designed which allows the mandatory load modulation principle in three-way DPA structures to be realized with simpler elements, whereas the design of a standard Doherty combiner would have been very challenging and not practical due to the extremely small value of its characteristic line impedance. The proposed combiner is calculated for a three-way DPA with 2-mm AlGaN/GaN-HEMTs. The simulation result shows a very good load modulation for the amplifier, which confirms the theoretical expectation for a three-way DPA. The efficiency of the designed 6 W three-way DPA at large back-off shows very promising values compared to recently reported amplifiers. The measured IMD3 products confirm the good linearity of the amplifier as well. Accordingly, the proposed power combiner and the design strategy are recommended to be used as the preferred option for designing three-way DPA structures with very high output power.
Author: Gunter Kompa Publisher: Artech House ISBN: 1630817457 Category : Technology & Engineering Languages : en Pages : 610
Book Description
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Author: Arvind Raghavan Publisher: John Wiley & Sons ISBN: 9780470228302 Category : Technology & Engineering Languages : en Pages : 224
Book Description
Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.
Author: Fernando Gregorio Publisher: Springer Nature ISBN: 3030324370 Category : Technology & Engineering Languages : en Pages : 269
Book Description
This book presents a synthesis of the research carried out in the Laboratory of Signal Processing and Communications (LaPSyC), CONICET, Universidad Nacional del Sur, Argentina, since 2003. It presents models and techniques widely used by the signal processing community, focusing on low-complexity methodologies that are scalable to different applications. It also highlights measures of the performance and impact of each compensation technique. The book is divided into three parts: 1) basic models 2) compensation techniques and 3) applications in advanced technologies. The first part addresses basic architectures of transceivers, their component blocks and modulation techniques. It also describes the performance to be taken into account, regardless of the distortions that need to be compensated. In the second part, several schemes of compensation and/or reduction of imperfections are explored, including linearization of power amplifiers, compensation of the characteristics of analog-to- digital converters and CFO compensation for OFDM modulation. The third and last part demonstrates the use of some of these techniques in modern wireless-communication systems, such as full-duplex transmission, massive MIMO schemes and Internet of Things applications.
Author: Paolo Colantonio Publisher: John Wiley & Sons ISBN: 9780470746554 Category : Technology & Engineering Languages : en Pages : 514
Book Description
Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.
Author: Michiel Steyaert Publisher: Springer Science & Business Media ISBN: 0792376218 Category : Computers Languages : en Pages : 395
Book Description
This tenth volume concentrates on three topics: scalable analogue circuits; high-speed D/A converters; and RF power amplifiers. Each topic is covered by six papers, written by an expert on that particular topic.
Author: Anna N. Rudiakova Publisher: Springer Science & Business Media ISBN: 1402046391 Category : Technology & Engineering Languages : en Pages : 140
Book Description
Advanced Design Techniques for RF Power Amplifiers provides a deep analysis of theoretical aspects, modelling, and design strategies of RF high-efficiency power amplifiers. The book can be used as a guide by scientists and engineers dealing with the subject and as a text book for graduate and postgraduate students. Although primarily intended for skilled readers, it provides an excellent quick start for beginners.
Author: Pui-In Mak Publisher: Springer Science & Business Media ISBN: 1441995390 Category : Technology & Engineering Languages : en Pages : 161
Book Description
This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes. Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques. Provides a valuable summary and real case studies of the state-of-the-art in high-/mixed-voltage circuits and systems; Includes novel high-/mixed-voltage analog and RF circuit techniques – from concept to practice; Describes the first high-voltage-enabled mobile-TVRF front-end in 90nm CMOS and the first mixed-voltage full-band mobile-TV Receiver in 65nm CMOS; Demonstrates the feasibility of high-/mixed-voltage circuit techniques with real design examples.
Author: Rui Ma
Author: Roshanak Lehna
Author: Gunter Kompa
Author: Arvind Raghavan
Author: Fernando Gregorio
Author: Paolo Colantonio
Author: Michiel Steyaert
Author: Anna N. Rudiakova
Author: Pui-In Mak
Author: