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Efficient Methods for Preparing Silicon Compounds

Efficient Methods for Preparing Silicon Compounds PDF Author: Herbert W Roesky
Publisher: Academic Press
ISBN: 0128035684
Category : Science
Languages : en
Pages : 538

Book Description
Efficient Methods for Preparing Silicon Compounds is a unique and valuable handbook for chemists and students involved in advanced studies of preparative chemistry in academia and industry. Organized by the various coordination numbers (from two to six) of the central silicon atom of the reported compounds, this book provides researchers with a handy and immediate reference for any compound or properties needed in the area. Edited by a renowned expert in the field, each chapter explores a different type of compound, thoroughly illustrated with useful schemes and supplemented by additional references. Knowledgeable contributors report on a broad range of compounds on which they have published and which are already used on a broad scale or have the potential to be used in the very near future to develop a new field of research or application in silicon chemistry. Includes contributions and edits from leading experts in the field Includes detailed chemical schemes and useful references for each preparative method Organized by the coordination numbers of the central silicon atom for each compound for easy navigation Serves as a go-to primer for researchers in novel compositions of silicon matter

Efficient Methods for Preparing Silicon Compounds

Efficient Methods for Preparing Silicon Compounds PDF Author: Herbert W Roesky
Publisher: Academic Press
ISBN: 0128035684
Category : Science
Languages : en
Pages : 538

Book Description
Efficient Methods for Preparing Silicon Compounds is a unique and valuable handbook for chemists and students involved in advanced studies of preparative chemistry in academia and industry. Organized by the various coordination numbers (from two to six) of the central silicon atom of the reported compounds, this book provides researchers with a handy and immediate reference for any compound or properties needed in the area. Edited by a renowned expert in the field, each chapter explores a different type of compound, thoroughly illustrated with useful schemes and supplemented by additional references. Knowledgeable contributors report on a broad range of compounds on which they have published and which are already used on a broad scale or have the potential to be used in the very near future to develop a new field of research or application in silicon chemistry. Includes contributions and edits from leading experts in the field Includes detailed chemical schemes and useful references for each preparative method Organized by the coordination numbers of the central silicon atom for each compound for easy navigation Serves as a go-to primer for researchers in novel compositions of silicon matter

Silicon Surfaces and Formation of Interfaces

Silicon Surfaces and Formation of Interfaces PDF Author: Jarek Dabrowski
Publisher: World Scientific
ISBN: 9789810232863
Category : Science
Languages : en
Pages : 580

Book Description
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.

Thin-Film Silicon Solar Cells

Thin-Film Silicon Solar Cells PDF Author: Arvind Shah
Publisher: EPFL Press
ISBN: 9781420066746
Category : Technology & Engineering
Languages : en
Pages : 472

Book Description
Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, starting out with the physical properties, but concentrating on device applications. A special emphasis is given to amorphous silicon and microcrystalline silicon as photovoltaic materials, along with a model that allows these systems to be physically described in the simplest manner possible, thus allowing the student or scientist/engineer entering the field of thin-film electronics to master a few basic concepts that are distinct from those in the field of conventional semiconductors. The main part of the book deals with solar cells and modules by illustrating the basic functioning of these devices, along with their limitations, design optimization, testing and fabrication methods. Among the manufacturing processes discussed are plasma-assisted and hot-wire deposition, sputtering, and structuring techniques.

Silicon Polymers

Silicon Polymers PDF Author: Aziz M. Muzafarov
Publisher: Springer
ISBN: 3642160484
Category : Technology & Engineering
Languages : en
Pages : 234

Book Description
Modern Synthetic and Application Aspects of Polysilanes: An Underestimated Class of Materials?, by A. Feigl, A. Bockholt, J. Weis, and B. Rieger; * Conjugated Organosilicon Materials for Organic Electronics and Photonics, by Sergei A. Ponomarenko and Stephan Kirchmeyer; * Polycarbosilanes Based on Silicon-Carbon Cyclic Monomers, by E.Sh. Finkelshtein, N.V. Ushakov, and M.L. Gringolts; * New Synthetic Strategies for Structured Silicones Using B(C6F5)3, by Michael A. Brook, John B. Grande, and François Ganachaud; * Polyhedral Oligomeric Silsesquioxanes with Controlled Structure: Formation and Application in New Si-Based Polymer Systems, by Yusuke Kawakami, Yuriko Kakihana, Akio Miyazato, Seiji Tateyama, and Md. Asadul Hoque;

Semiconductor Silicon 1977

Semiconductor Silicon 1977 PDF Author: Howard R. Huff
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 1170

Book Description


Functional Molecular Silicon Compounds II

Functional Molecular Silicon Compounds II PDF Author: David Scheschkewitz
Publisher: Springer
ISBN: 331903734X
Category : Science
Languages : en
Pages : 232

Book Description
The series Structure and Bonding publishes critical reviews on topics of research concerned with chemical structure and bonding. The scope of the series spans the entire Periodic Table and addresses structure and bonding issues associated with all of the elements. It also focuses attention on new and developing areas of modern structural and theoretical chemistry such as nanostructures, molecular electronics, designed molecular solids, surfaces, metal clusters and supramolecular structures. Physical and spectroscopic techniques used to determine, examine and model structures fall within the purview of Structure and Bonding to the extent that the focus is on the scientific results obtained and not on specialist information concerning the techniques themselves. Issues associated with the development of bonding models and generalizations that illuminate the reactivity pathways and rates of chemical processes are also relevant. The individual volumes in the series are thematic. The goal of each volume is to give the reader, whether at a university or in industry, a comprehensive overview of an area where new insights are emerging that are of interest to a larger scientific audience. Thus each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years should be presented using selected examples to illustrate the principles discussed. A description of the physical basis of the experimental techniques that have been used to provide the primary data may also be appropriate, if it has not been covered in detail elsewhere. The coverage need not be exhaustive in data, but should rather be conceptual, concentrating on the new principles being developed that will allow the reader, who is not a specialist in the area covered, to understand the data presented. Discussion of possible future research directions in the area is welcomed. Review articles for the individual volumes are invited by the volume editors. Readership: research scientists at universities or in industry, graduate students Special offer for all customers who have a standing order to the print version of Structure and Bonding, we offer free access to the electronic volumes of the Series published in the current year via SpringerLink.

Silicon Nanophotonics

Silicon Nanophotonics PDF Author: Leonid Khriachtchev
Publisher: CRC Press
ISBN: 1315341131
Category : Science
Languages : en
Pages : 522

Book Description
Photonics is a key technology of this century. The combination of photonics and silicon technology is of great importance because of the potentiality of coupling electronics and optical functions on a single chip. Many experimental and theoretical studies have been performed to understand and design the photonic properties of silicon nanocrystals. Generation of light in silicon is a challenging perspective in the field; however, the issue of light-emitting devices does not limit the activity in the field. Research is also focused on light modulators, optical waveguides and interconnectors, optical amplifiers, detectors, memory elements, photonic crystals, etc. A particularly important task of silicon nanostructures is to generate electrical energy from solar light. Understanding the optical properties of silicon-based materials is central in designing photonic components. It is not possible to control the optical properties of nanoparticles without fundamental information on their microscopic structure, which explains a large number of theoretical works on this subject. Many fundamental and practical problems should be solved in order to develop this technology. In addition to open fundamental questions, it is even more difficult to develop the known experimental results towards practical realization. However, the world market for silicon photonics is expected to be huge; thus, more research activity in the field of silicon nanophotonics is expected in the future. This book describes different aspects of silicon nanophotonics, from fundamental issues to practical devices. The second edition is essentially different from the book published in 2008. Eight chapters of the first edition are not included in the new book, because the recent progress on those topics has not been large enough. Instead, seven new chapters appear. The other eight chapters are essentially modified to describe recent achievements in the field.

Silicon Photonics

Silicon Photonics PDF Author: Lorenzo Pavesi
Publisher: Springer Science & Business Media
ISBN: 9783540210221
Category : Science
Languages : en
Pages : 424

Book Description
This book gives a fascinating picture of the state-of-the-art in silicon photonics and a perspective on what can be expected in the near future. It is composed of a selected number of reviews authored by world leaders in the field and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microphotonics and optoelectronics.

Silicon Nanomembranes

Silicon Nanomembranes PDF Author: John A. Rogers
Publisher: John Wiley & Sons
ISBN: 3527338314
Category : Technology & Engineering
Languages : en
Pages : 368

Book Description
Edited by the leaders in the fi eld, with chapters from highly renowned international researchers, this is the fi rst coherent overview of the latest in silicon nanomembrane research. As such, it focuses on the fundamental and applied aspects of silicon nanomembranes, ranging from synthesis and manipulation to manufacturing, device integration and system level applications, including uses in bio-integrated electronics, three-dimensional integrated photonics, solar cells, and transient electronics. The first part describes in detail the fundamental physics and materials science involved, as well as synthetic approaches and assembly and manufacturing strategies, while the second covers the wide range of device applications and system level demonstrators already achieved, with examples taken from electronics and photonics and from biomedicine and energy.

Silicon-on-Insulator Technology

Silicon-on-Insulator Technology PDF Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 1475721218
Category : Technology & Engineering
Languages : en
Pages : 236

Book Description
5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .