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Author: François Triozon Publisher: John Wiley & Sons ISBN: 1848215665 Category : Technology & Engineering Languages : en Pages : 400
Book Description
Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.
Author: François Triozon Publisher: John Wiley & Sons ISBN: 1848215665 Category : Technology & Engineering Languages : en Pages : 400
Book Description
Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.
Author: Dragica Vasileska Publisher: Springer Science & Business Media ISBN: 1441988408 Category : Technology & Engineering Languages : en Pages : 441
Book Description
This book surveys the advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices. It systematically describes theoretical approaches and the numerical solutions that are used in explaining the operation of both power devices as well as nano-scale devices. It clearly explains for what types of devices a particular method is suitable, which is the most critical point that a researcher faces and has to decide upon when modeling semiconductor devices.
Author: Yu Zhu Publisher: World Scientific ISBN: 9813141441 Category : Science Languages : en Pages : 436
Book Description
Computational nanoelectronics is an emerging multi-disciplinary field covering condensed matter physics, applied mathematics, computer science, and electronic engineering. In recent decades, a few state-of-the-art software packages have been developed to carry out first-principle atomistic device simulations. Nevertheless those packages are either black boxes (commercial codes) or accessible only to very limited users (private research codes). The purpose of this book is to open one of the commercial black boxes, and to demonstrate the complete procedure from theoretical derivation, to numerical implementation, all the way to device simulation. Meanwhile the affiliated source code constitutes an open platform for new researchers. This is the first book of its kind. We hope the book will make a modest contribution to the field of computational nanoelectronics. Contents:IntroductionThe NECPA TheoryThe NECPA-LMTO MethodNanoDsim: The Package DesignNanoDsim: Bulk SystemsNanoDsim: Two-Probe SystemsNanoDsim: Optimization and ParallelizationKaleidoscope of the Physics in Disordered SystemsAppendix Readership: Post-graduate students or professional researchers who are interested in computational physics, device physics, quantum transport, disorder systems, and overlap of the above.
Author: El-Saba, Muhammad Publisher: IGI Global ISBN: 1522523138 Category : Technology & Engineering Languages : en Pages : 677
Book Description
Rapid developments in technology have led to enhanced electronic systems and applications. When utilized correctly, these can have significant impacts on communication and computer systems. Transport of Information-Carriers in Semiconductors and Nanodevices is an innovative source of academic material on transport modelling in semiconductor material and nanoscale devices. Including a range of perspectives on relevant topics such as charge carriers, semiclassical transport theory, and organic semiconductors, this is an ideal publication for engineers, researchers, academics, professionals, and practitioners interested in emerging developments on transport equations that govern information carriers.
Author: Basil T. Wong Publisher: Springer Science & Business Media ISBN: 3540736077 Category : Science Languages : en Pages : 243
Book Description
Beginning with an overview of nanomachining, this monograph introduces the relevant concepts from solid-state physics, thermodynamics, and lattice structures. It then covers modeling of thermal transport at the nanoscale and details simulations of different processes relevant to nanomachining. The final chapter summarizes the important points and discusses directions for future work to improve the modeling of nanomachining.
Author: Christophe Jean Delerue Publisher: Springer Science & Business Media ISBN: 3662089033 Category : Technology & Engineering Languages : en Pages : 313
Book Description
Provides the theoretical background needed by physicists, engineers and students to simulate nano-devices, semiconductor quantum dots and molecular devices. It presents in a unified way the theoretical concepts, the more recent semi-empirical and ab initio methods, and their application to experiments. The topics include quantum confinement, dielectric and optical properties, non-radiative processes, defects and impurities, and quantum transport. This guidebook not only provides newcomers with an accessible overview (requiring only basic knowledge of quantum mechanics and solid-state physics) but also provides active researchers with practical simulation tools.
Author: David K. Ferry Publisher: Cambridge University Press ISBN: 0521877482 Category : Science Languages : en Pages : 671
Book Description
The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
Author: Massimo Rudan Publisher: Springer Nature ISBN: 3030798275 Category : Technology & Engineering Languages : en Pages : 1680
Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author: François Triozon
Author: François Triozon
Author: Dragica Vasileska
Author: Yu Zhu
Author: El-Saba, Muhammad
Author: Basil T. Wong
Author: Christophe Jean Delerue
Author: 
Author: David K. Ferry
Author: Massimo Rudan
Author: