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Author: Michael S Shur Publisher: World Scientific ISBN: 9814486302 Category : Technology & Engineering Languages : en Pages : 364
Book Description
The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas.
Author: Michael S Shur Publisher: World Scientific ISBN: 9814486302 Category : Technology & Engineering Languages : en Pages : 364
Book Description
The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas.
Author: William R. Loerop Publisher: World Scientific ISBN: 9789812796820 Category : Technology & Engineering Languages : en Pages : 366
Book Description
The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas. Contents: THz Technology: An Overview (P H Siegel); Two-Terminal Active Devices for Terahertz Sources (G I Haddad et al.); Multiplier and Harmonic Generator Technologies for Terahertz Applications (R M Weikle II et al.); Submicron InP-Based HBTs for Ultra-High Frequency Amplifiers (M Urteaga et al.); THz Generation by Photomixing in Ultrafast Photoconductors (E R Brown); Silicon-Germanium Quantum-Cascade Lasers (R W Kelsall & R A Soref); Plasma Wave Electronics (M S Shur & V Ryzhii); T-Ray Sensing and Imaging (S P Mickan & X-C Zhang); Multistatic Reflection Imaging with Terahertz Pulses (T D Dorney et al.). Readership: Undergraduates, graduate students, academics and researchers in electrical & electronic engineering.
Author: Dwight L. Woolard Publisher: World Scientific ISBN: 9812383344 Category : Technology & Engineering Languages : en Pages : 360
Book Description
The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas.
Author: Michael S Shur Publisher: World Scientific ISBN: 9814483990 Category : Technology & Engineering Languages : en Pages : 428
Book Description
The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas.Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the “THz gap”.
Author: Dwight L. Woolard Publisher: World Scientific ISBN: 9812386114 Category : Technology & Engineering Languages : en Pages : 420
Book Description
The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas.Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the ?THz gap?.
Author: Dan M. Fleetwood Publisher: World Scientific ISBN: 9789812794703 Category : Technology & Engineering Languages : en Pages : 354
Book Description
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."
Author: Sergey Rumyantsev Publisher: World Scientific ISBN: 981447777X Category : Technology & Engineering Languages : en Pages : 342
Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author: Michael S. Shur Publisher: World Scientific ISBN: 981277033X Category : Science Languages : en Pages : 205
Book Description
This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many firsts and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and hot off the press results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.
Author: Michael Shur Publisher: World Scientific ISBN: 9814725218 Category : Technology & Engineering Languages : en Pages : 100
Book Description
This book brings together seven selected best papers presented at the 2014 Russia–Japan–USA Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2014), which was held at the University of Buffalo, New York, USA on 17–21 June 2014. As the third in the series of annual meetings, RJUS TeraTech-2014 continues to be an excellent platform for researchers to exchange their recent original results, and to deal with the technical challenges and barriers of transitioning the research results into the THz system-level applications. The symposium focuses on 2 main areas, namely, interaction of THz radiation with micro- and nano-structures, and advanced solid-state THz emitters and sensors. Leading experts from academia, industry, and government agencies from three countries, including USA, Japan, and Russia, contributed to the collection of research results and developments. This book, covering issues ranging from basic Thz-related phenomena to applications in sensing, imaging, and communications, contains some ground-breaking works in the industry, and will be a useful reference for device and electronics engineers and scientists. Contents:Terahertz Sensing Technology (M Shur)Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors (D M Yermolayev, E A Polushkin, S Yu Shapoval, V V Popov, K V Marem′yanin, V I Gavrilenko, N A Maleev, V M Ustinov, V E Zemlyakov, V I Yegorkin, V A Bespalov, A V Muravjov, S L Rumyantsev and M S Shur)Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications (D V Lavrukhin, A E Yachmenev, R R Galiev, A S Bugaev, Y V Fedorov, R A Khabibullin, D S Ponomarev and P P Maltsev)Peculiarity of Terahertz Waves Scattering (I N Dolganova, S O Yurchenko, V E Karasik and V P Budak)Rashba Effect and Beating Patterns in the THz Magneto-Photoresponse of a HgTe-Based Two-Dimensional Electron Gas (M Pakmehr, C Brüne, H Buhmann, L W Molenkamp and B D McCombe)Characterization of High Mobility InAlAs/InGaAs/InAlAs Composite Channels by THz Magneto-Photoresponse Spectroscopy (M Pakmehr, B D McCombe, O Chiatti, S F Fischer, Ch Heyn and W Hansen)Quantum Dot Solar Cells with Nanoscale Barriers Around Dots: Experiment and Two-Diode Model Analysis (Y Li, A Sergeev, N Vagidov, V Mitin and K Sablon) Readership: Scientists, engineers and researchers interested in terahertz materials, devices, systems and applications, as well as graduate students working on terahertz science and technology. Keywords:Terahertz Devices and Technologies;Terahertz Radiation;Micro-and Nanostructures;Emitters and Sensors
Author: Michael S Shur
Author: Michael S Shur
Author: William R. Loerop
Author: Dwight L. Woolard
Author: 
Author: Michael S Shur
Author: Dwight L. Woolard
Author: Dan M. Fleetwood
Author: Sergey Rumyantsev
Author: Michael S. Shur
Author: Michael Shur