Einstein Relation in Compound Semiconductors and Their Nanostructures PDF Download

Author: Kamakhya Prasad Ghatak
Publisher: Springer
ISBN: 9783540872535
Category : Science
Languages : en
Pages : 458

View

Book Description
Focusing only on the Einstein relation in compound semiconductors and their nanostructures, this book deals with open research problems from carbon nanotubes to quantum wire superlattices with different band structures, and other field assisted systems.

Author: Kamakhya Prasad Ghatak
Publisher: Springer Science & Business Media
ISBN: 354079557X
Category : Science
Languages : en
Pages : 471

View

Book Description
Focusing only on the Einstein relation in compound semiconductors and their nanostructures, this book deals with open research problems from carbon nanotubes to quantum wire superlattices with different band structures, and other field assisted systems.

Author: Kamakhya Prasad Ghatak
Publisher: Springer Science & Business Media
ISBN: 0387786066
Category : Technology & Engineering
Languages : en
Pages : 340

View

Book Description
In recent years, with the advent of fine line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum confinement in one, two and three dimensions (such as ultrathin films, inversion layers, accumulation layers, quantum well superlattices, quantum well wires, quantum wires superlattices, magneto-size quantizations, and quantum dots) have attracted much attention not only for their potential in uncovering new phenomena in nanoscience and technology, but also for their interesting applications in the areas of quantum effect devices. In ultrathin films, the restriction of the motion of the carriers in the direction normal to the film leads to the quantum size effect and such systems find extensive applications in quantum well lasers, field effect transistors, high speed digital networks and also in other quantum effect devices. In quantum well wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed.

Author: Kamakhya Ghatak
Publisher: Springer
ISBN: 9783319083810
Category : Science
Languages : en
Pages : 347

View

Book Description
This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.

Author: Kamakhya P. Ghatak
Publisher: Springer
ISBN: 3319083805
Category : Science
Languages : en
Pages : 347

View

Book Description
This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.

Author: Kamakhya Prasad Ghatak
Publisher: Springer
ISBN: 3319210009
Category : Technology & Engineering
Languages : en
Pages : 625

View

Book Description
This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

Author: Kamakhya Prasad Ghatak
Publisher: World Scientific
ISBN: 981471321X
Category : Technology & Engineering
Languages : en
Pages : 828

View

Book Description
This pioneering monograph solely deals with the Magneto Thermoelectric Power (MTP) in Heavily Doped (HD) Quantized Structures. The materials considered range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces and HD effective mass superlattices under magnetic quantization. An important concept of the measurement of the band gap in HD optoelectronic materials in the presence of external photo-excitation has been discussed in this perspective. The influences of magnetic quantization, crossed electric and quantizing fields, the intense electric field on the TPM in HD semiconductors and superlattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the various fields for which this particular series is dedicated. Contents:Part I: Magneto Thermoelectric Power (MTP) in HD Quantum Confined Non-Parabolic Semiconductors:The MTP in Quantum Wells (QWs) of Heavily Doped (HD) Non-Parabolic SemiconductorsThe MTP in Nano Wires (NWs) of Heavily Doped (HD) Non-Parabolic SemiconductorsThe MTP from Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic SemiconductorsThe MTP in Heavily Doped (HD) Non-Parabolic Semiconductors Under Magnetic QuantizationThe MTP in Heavily Doped (HD) Non-Parabolic Semiconductors Under Magneto-Size QuantizationPart II: The MTP in Heavily Doped (HD) Quantum Confined Superlattices:The MTP in Quantum Wire HDSLsThe MTP in Quantum Dot HDSLsThe MTP in HDSLs Under Magnetic QuantizationPart III: Few Related Applications, Conclusions and Future Research and Appendices:Few Related ApplicationsConclusion and Scope for Future ResearchAppendices:The MTP Under Photo Excitation in HD Kane-Type SemiconductorsThe MTP in Doping Superlattices of HD Non-Parabolic SemiconductorsThe MTP in QWHDSLs Under Magnetic QuantizationThe MTP in Accumulation and Inversion Layers of Non-Parabolic SemiconductorsThe MTP in HDs Under Cross-Fields ConfigurationThe MTP in Heavily Doped Ultra-Thin Films (HDUFs) Under Cross-Fields ConfigurationThe MTP in Doping Superlattices of HD Non-Parabolic Semiconductors Under Magnetic QuantizationThe MTP in Accumulation and Inversion Layers of Non-Parabolic Semiconductors Under Magnetic QuantizationThe MTP in QWHDSLsThe MTP under Intense Electric Field in HD Kane Type Semiconductors Readership: Graduate students, researchers and academics interested in advanced solid state physics and nanoelectronics. Keywords:Quantum Confined Structures;Heavily Doped;Nano-Structures;Opto-Electric Materials;Superlattices;Ternary Semiconductors;Quarternary Semiconductors;Low Dimensional Materials;Nonparabolic Semiconductors

Author: Kamakhya Prasad Ghatak
Publisher: Springer
ISBN: 3319111884
Category : Science
Languages : en
Pages : 495

View

Book Description
This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.

Author: Wolfram Schommers
Publisher: World Scientific
ISBN: 9811256136
Category : Science
Languages : en
Pages : 872

View

Book Description
With the development of the scanning tunneling microscope, nanoscience became an important discipline. Single atoms could be manipulated in a controlled manner, and it became possible to change matter at its 'ultimate' level; it is the level on which the properties of matter emerge. This possibility enables to construct and to produce devices, materials, etc. with very small sizes and completely new properties. That opens up new perspectives for technology and is in particular relevant in connection with nano-engineering.Nanosystems are unimaginably small and very fast. No doubt, this is an important characteristic. But there is another feature, possibly more relevant, in connection with nanoscience and nanotechnology. The essential point here is that we work at the 'ultimate level'. This is the smallest level at which the properties of our world emerge, at which functional matter can exist. In particular, at this level biological individuality comes into existence. This situation can be expressed in absolute terms: This is not only the strongest material ever made, this is the strongest material it will ever be possible to make (D Ratner and M Ratner, Nanotechnology and Homeland Security). This is a very general statement. All aspects of matter are concerned here. Through the variation of the composition various forms of matter emerge with different items.Nanosystems are usually small, but they offer nevertheless the possibility to vary the structure of atomic (molecular) ensembles, creating a diversity of new material-specific properties. A large variety of experimental possibilities come into play and flexible theoretical tools are needed at the basic level. This is reflected in the different disciplines: In nanoscience and nanotechnology we have various directions: Materials science, functional nanomaterials, nanoparticles, food chemistry, medicine with brain research, quantum and molecular computing, bioinformatics, magnetic nanostructures, nano-optics, nano-electronics, etc.The properties of matter, which are involved within these nanodisciplines, are ultimate in character, i.e., their characteristic properties come into existence at this level. The book is organized in this respect.

Author: Wolfram Schommers
Publisher: World Scientific
ISBN: 9811243883
Category : Science
Languages : en
Pages : 406

View

Book Description
With the development of the scanning tunneling microscope, nanoscience became an important discipline. Single atoms could be manipulated in a controlled manner, and it became possible to change matter at its 'ultimate' level; it is the level on which the properties of matter emerge. This possibility enables to construct and to produce devices, materials, etc. with very small sizes and completely new properties. That opens up new perspectives for technology and is in particular relevant in connection with nano-engineering.Nanosystems are unimaginably small and very fast. No doubt, this is an important characteristic. But there is another feature, possibly more relevant, in connection with nanoscience and nanotechnology. The essential point here is that we work at the 'ultimate level'. This is the smallest level at which the properties of our world emerge, at which functional matter can exist. In particular, at this level biological individuality comes into existence. This situation can be expressed in absolute terms: This is not only the strongest material ever made, this is the strongest material it will ever be possible to make (D Ratner and M Ratner, Nanotechnology and Homeland Security). This is a very general statement. All aspects of matter are concerned here. Through the variation of the composition various forms of matter emerge with different items.Nanosystems are usually small, but they offer nevertheless the possibility to vary the structure of atomic (molecular) ensembles, creating a diversity of new material-specific properties. A large variety of experimental possibilities come into play and flexible theoretical tools are needed at the basic level. This is reflected in the different disciplines: In nanoscience and nanotechnology we have various directions: Materials science, functional nanomaterials, nanoparticles, food chemistry, medicine with brain research, quantum and molecular computing, bioinformatics, magnetic nanostructures, nano-optics, nano-electronics, etc.The properties of matter, which are involved within these nanodisciplines, are ultimate in character, i.e., their characteristic properties come into existence at this level. The book is organized in this respect.