Proceedings of the International Symposium [on] Foundations of Quantum Mechanics in the Light of New Technology, Central Research Laboratory, Hitachi, Ltd. Kokubunji Tokyo, Japan, August 29-31, 1983 PDF Download

Author: Susumu Kamefuchi
Publisher:
ISBN:
Category : Quantum theory
Languages : en
Pages : 377

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Author: Susumu Kamefuchi
Publisher:
ISBN:
Category : Quantum optics
Languages : en
Pages : 400

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Author:
Publisher:
ISBN:
Category : Nuclear physics
Languages : en
Pages : 794

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Author: Masaru Tsukada
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 304

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Author: Richard W. Siegel
Publisher: Springer Science & Business Media
ISBN: 9401591857
Category : Technology & Engineering
Languages : en
Pages : 354

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Timely information on scientific and engineering developments occurring in laboratories around the world provides critical input to maintaining the economic and technological strength of the United States. Moreover, sharing this information quickly with other countries can greatly enhance the productivity of scientists and engineers. These are some of the reasons why the National Science Foundation (NSF) has been involved in funding science and technology assessments comparing the United States and foreign countries since the early 1980s. A substantial number of these studies have been conducted by the World Technology Evaluation Center (WTEC) managed by Loyola College through a cooperative agreement with NSF. The National Science and Technology Council (NSTC), Committee on Technology's Interagency Working Group on NanoScience, Engineering and Technology (CT/IWGN) worked with WTEC to develop the scope of this Nanostucture Science and Technology report in an effort to develop a baseline of understanding for how to strategically make Federal nanoscale R&D investments in the coming years. The purpose of the NSTC/WTEC activity is to assess R&D efforts in other countries in specific areas of technology, to compare these efforts and their results to U. S. research in the same areas, and to identify opportunities for international collaboration in precompetitive research. Many U. S. organizations support substantial data gathering and analysis efforts focusing on nations such as Japan. But often the results of these studies are not widely available. At the same time, government and privately sponsored studies that are in the public domain tend to be "input" studies.

Author: Riel Miller
Publisher: Routledge
ISBN: 1351047981
Category : Nature
Languages : en
Pages : 276

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People are using the future to search for better ways to achieve sustainability, inclusiveness, prosperity, well-being and peace. In addition, the way the future is understood and used is changing in almost all domains, from social science to daily life. This book presents the results of significant research undertaken by UNESCO with a number of partners to detect and define the theory and practice of anticipation around the world today. It uses the concept of ‘Futures Literacy’ as a tool to define the understanding of anticipatory systems and processes – also known as the Discipline of Anticipation. This innovative title explores: • new topics such as Futures Literacy and the Discipline of Anticipation; • the evidence collected from over 30 Futures Literacy Laboratories and presented in 14 full case studies; • the need and opportunity for significant innovation in human decision-making systems. This book will be of great interest to scholars, researchers, policy-makers and students, as well as activists working on sustainability issues and innovation, future studies and anticipation studies. The Open Access version of this book, available at https://www.taylorfrancis.com/books/e/9781351047999, has been made available under a Attribution-NonCommercial-NoDerivs 3.0 IGO (CC-BY-NC-ND 3.0 IGO) license.

Author: Hermann Grabert
Publisher: Springer Science & Business Media
ISBN: 1475721668
Category : Science
Languages : en
Pages : 344

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The field of single charge tunneling comprises of phenomena where the tunneling of a microscopic charge, usually carried by an electron or a Cooper pair, leads to macro scopically observable effects. The first conference entirely devoted to this new field was the NATO Advanced Study Institute on Single Charge Tunneling held in Les Hauches, France, March 5-15, 1991. This book contains a series of tutorial articles based on lectures presented at the meeting. It was intended to provide both an introduction for nonexperts and a valuable reference summarizing the state of the art of single charge tun neling. A complementary publication with contributions by participants of the NATO Advanced Study Institute is the Special Issue on Single Charge Tunneling of Zeitschrift für Physik B, Vol. 85, pp. 317-468 (1991 ). That issue with original papers provides a snapshot af the leading edge of current research in the field. The success of the meeting and the publicatian of this volume was made possible through the generaus support af the NATO Scientific A:ffairs Division, Brussels, Belgium. The Centre de Physique des Hauches has provided a superbly situated conference site and took care af many lacal arrangements. Both far the preparation of the conference and the handling af some manuscripts the suppart af the Centre d 'Etudes de Saclay was essential. The editing of the proceedings volume would not have been passible without the dedicated efforts of Dr. G. -1. Ingald, who tailared a 1\.

Author: Calvin G. Burnham
Publisher: World Scientific
ISBN: 9789971506100
Category : Science
Languages : en
Pages : 710

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The development of high temperature superconductors is one of the major technological discoveries of this century. The impact and interactions from the scientific, technical, business and political aspects will be presented.

Author: Howard Huff
Publisher: Springer Science & Business Media
ISBN: 9783540210818
Category : Science
Languages : en
Pages : 740

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Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Author: David Ferry
Publisher: Springer Science & Business Media
ISBN: 9780306438813
Category : Science
Languages : en
Pages : 616

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The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.