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Author: Xin Tong Publisher: Springer Nature ISBN: 3030742709 Category : Technology & Engineering Languages : en Pages : 319
Book Description
This book presents a comprehensive overview of state-of-the-art quantum dot photodetectors, including device fabrication technologies, optical engineering/manipulation strategies, and emerging photodetectors with building blocks of novel quantum dots (e.g. perovskite) as well as their hybrid structured (e.g. 0D/2D) materials. Semiconductor quantum dots have attracted much attention due to their unique quantum confinement effect, which allows for the facile tuning of optical properties that are promising for next-generation optoelectronic applications. Among these remarkable properties are large absorption coefficient, high photosensitivity, and tunable optical spectrum from ultraviolet/visible to infrared region, all of which are very attractive and favorable for photodetection applications. The book covers both fundamental and frontier research in order to stimulate readers' interests in developing novel ideas for semiconductor photodetectors at the center of future developments in materials science, nanofabrication technology and device commercialization. The book provides a knowledge sharing platform and can be used as a reference for researchers working in the fields of photonics, materials science, and nanodevices.
Author: Xin Tong Publisher: Springer Nature ISBN: 3030742709 Category : Technology & Engineering Languages : en Pages : 319
Book Description
This book presents a comprehensive overview of state-of-the-art quantum dot photodetectors, including device fabrication technologies, optical engineering/manipulation strategies, and emerging photodetectors with building blocks of novel quantum dots (e.g. perovskite) as well as their hybrid structured (e.g. 0D/2D) materials. Semiconductor quantum dots have attracted much attention due to their unique quantum confinement effect, which allows for the facile tuning of optical properties that are promising for next-generation optoelectronic applications. Among these remarkable properties are large absorption coefficient, high photosensitivity, and tunable optical spectrum from ultraviolet/visible to infrared region, all of which are very attractive and favorable for photodetection applications. The book covers both fundamental and frontier research in order to stimulate readers' interests in developing novel ideas for semiconductor photodetectors at the center of future developments in materials science, nanofabrication technology and device commercialization. The book provides a knowledge sharing platform and can be used as a reference for researchers working in the fields of photonics, materials science, and nanodevices.
Author: Zhiming M. Wang Publisher: Springer Science & Business Media ISBN: 1461435706 Category : Science Languages : en Pages : 375
Book Description
Quantum dots as nanomaterials have been extensively investigated in the past several decades from growth to characterization to applications. As the basis of future developments in the field, this book collects a series of state-of-the-art chapters on the current status of quantum dot devices and how these devices take advantage of quantum features. Written by 56 leading experts from 14 countries, the chapters cover numerous quantum dot applications, including lasers, LEDs, detectors, amplifiers, switches, transistors, and solar cells. Quantum Dot Devices is appropriate for researchers of all levels of experience with an interest in epitaxial and/or colloidal quantum dots. It provides the beginner with the necessary overview of this exciting field and those more experienced with a comprehensive reference source.
Author: Ye Zhou Publisher: Springer Nature ISBN: 9811566372 Category : Technology & Engineering Languages : en Pages : 374
Book Description
This book addresses perovskite quantum dots, discussing their unique properties, synthesis, and applications in nanoscale optoelectronic and photonic devices, as well as the challenges and possible solutions in the context of device design and the prospects for commercial applications. It particularly focuses on the luminescent properties, which differ from those of the corresponding quantum dots materials, such as multicolor emission, fluorescence narrowing, and tunable and switchable emissions from doped nanostructures. The book first describes the characterization and fabrication of perovskite quantum dots. It also provides detailed methods for analyzing the electrical and optical properties, and demonstrates promising applications of perovskite quantum dots. Furthermore, it presents a series of optoelectronic and photonic devices based on functional perovskite quantum dots, and explains the incorporation of perovskite quantum dots in semiconductor devices and their effect of the performance. It also explores the challenges related to optoelectronic devices, as well as possible strategies to promote their commercialization. As such, this book is a valuable resource for graduate students and researchers in the field of solid-state materials and electronics wanting to gain a better understanding of the characteristics of quantum dots, and the fundamental optoelectronic properties and operation mechanisms of the latest perovskite quantum dot-based devices.
Author: Sourav Adhikary Publisher: Springer ISBN: 9811052905 Category : Technology & Engineering Languages : en Pages : 63
Book Description
This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.
Author: Saumya Sengupta Publisher: Springer ISBN: 9811057028 Category : Technology & Engineering Languages : en Pages : 59
Book Description
This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.
Author: Kwong-kit Choi Publisher: World Scientific ISBN: 9814498173 Category : Science Languages : en Pages : 434
Book Description
In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared imaging.
Author: Publisher: Elsevier ISBN: 9780123813381 Category : Science Languages : en Pages : 384
Book Description
Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. Written and edited by internationally renowned experts Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry
Author: Manijeh Razeghi Publisher: Springer Science & Business Media ISBN: 1441910565 Category : Technology & Engineering Languages : en Pages : 560
Book Description
Technology of Quantum Devices offers a multi-disciplinary overview of solid state physics, photonics and semiconductor growth and fabrication. Readers will find up-to-date coverage of compound semiconductors, crystal growth techniques, silicon and compound semiconductor device technology, in addition to intersubband and semiconductor lasers. Recent findings in quantum tunneling transport, quantum well intersubband photodetectors (QWIP) and quantum dot photodetectors (QWDIP) are described, along with a thorough set of sample problems.
Author: Xin Tong
Author: Xin Tong
Author: Gerasimos Konstantatos
Author: Zhiming M. Wang
Author: Ye Zhou
Author: Sourav Adhikary
Author: Saumya Sengupta
Author: Jiang Wu
Author: Kwong-kit Choi
Author: 
Author: Manijeh Razeghi